Antiferromagnetic neuromorphic memory: New spintronic device achieves brain-like memory and processing
A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic devices based on CoO/Pt heterostructure. The study is published in Nano Letters.
A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic devices based on CoO/Pt heterostructure. The study is published in Nano Letters.
